中国物理快报(英文版)版面费(3)

时间:2017-03-17 12:07:37 来源:论文投稿

  (96)Effect of Back Diffusion of Mg Dopants on Optoelectronic Properties of InGaN-Based Green Light-Emitting Diodes张宁[1];魏学成[1];路坤熠[2];冯梁森[1];杨杰[1];薛斌[1];刘喆[1];李晋闽[1];王军喜[1]

  (99)Comparison of GaN/AlGaN/AlN/GaN HEMTs Grown on Sapphire with Fe-Modulation-Doped and Unintentionally Doped GaN Buffer: Material Growth and Device Fabrication巩稼民[1];王权[1,2];闫俊达[2];刘峰奇[2];冯春[2];王晓亮[2];王占国[2]

  (104)Remanence Enhancement Effect in Ni0.7Zn0.3Fe2O4/Co0.8Fe2.2O4 Ferrite Multilayer Film范程华[1,2];王群京[1];訾振发[2]

  (108)Integer Quantum Hall Effect in a Two-Orbital Square Lattice with Chern Number C:2郁华玲[1,2];翟章印[1,2];边心田[1]

  (112)Enhancement of Resonant Activation by Constant Bias Current for Superconducting Junction李静辉

  (116)Effects of Contents of Multiwall Carbon Nanotubes in Polyaniline Films on Optical and Electrical Properties of PolyanUineN. Bafandeh[1];M. M. Larijani[2];A. Shafiekhani[3,4];M. R. Hantehzadeh[1];N. Sheikh[2]

  (120)Boron-Doped Diamond-Film-Based Two-Dimensional Electrode of Electrophoresis Tank刘钧松;李航;孙博文;丁战辉;王启亮;成绍恒;李红东

  (124)Effects of Fe-Oxide and Mg Layer Insertion on Tunneling Magnetoresistance Properties of CoFeB/MgO/CoFeB Magnetic Tunnel Junctions娄永乐[1];张玉明[1];郭辉[1];徐大庆[2];张义门[1]

  (127)High-Mobility P-Type MOSFETs with Integrated Strained-Si0.73Ge0.27 Channels and High-κ/Metal Gates毛淑娟[1];朱正勇[2];王桂磊[1];朱慧珑[1];李俊峰[1];赵超[1]

  (I0002)Instruction for authors


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